DAN217U
Switching Diode (High speed switching)
Data sheet
●Outline
VRM
80
V
IFM
Io
r IFSM
fo ●Feature
High reliability
300
mA
100
mA
4000
mA
●Inner Circuit
ndeds ●Application
e n High speed switching
m ig ●Structure
s Epitaxial planar
m e ●Absolute Maximum Ratings (Ta = 25ºC)
o D Parameter
Symbol
Reverse voltage
VR
c Repetitive peak reverse voltage
VRM
e Average rectified forward current
Io
w Forward current
IFM
R e Peak forward surge current
IFSM
Power dissipation *
PD
t N Junction temperature
Tj
Storage temperature
Tstg
o*2 elements total
N●Characteristics (Ta = 25ºC)
●Packaging Specifications
Packing
Embossed Tape
Reel Size(mm)
180
Taping Width(mm)
8
Basic Ordering Unit(pcs)
3000
Taping Code
T106
Marking
A7
Conditions
-
-
-
-
t=1μs
-
-
-
Limits
Unit
80
V
80
V
100
mA
300
mA
4000
mA
200
mW
150
℃
-55 ~ 150
℃
Value per element
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Forward voltage
VF
IF=100mA
- - 1.2 V
Reverse current
IR
VR=70V
- - 0.2 μA
Capacitance between terminals *
Ct
VR=6.0V f=1.0MHz
- - 3.5 pF
Reverse recoverytime
trr
VR=6.0V IF=5.0mA RL=50Ω - - 4.0 ns
※Caution:static electricity
* Capacitance:b/w 1pin and 2pin
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2016/03/17_Rev.002