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29F64G08CBAAA View Datasheet(PDF) - Micron Technology

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29F64G08CBAAA
Micron
Micron Technology Micron
29F64G08CBAAA Datasheet PDF : 159 Pages
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64Gb, 128Gb, 256Gb, 512Gb Asynchronous/Synchronous NAND
Bus Operation – Asynchronous Interface
Asynchronous Addresses
An asynchronous address is written from DQ[7:0] to the address register on the rising
edge of WE# when CE# is LOW, ALE is HIGH, CLE is LOW, and RE# is HIGH.
Bits that are not part of the address space must be LOW (see Device and Array Organiza-
tion). The number of cycles required for each command varies. Refer to the command
descriptions to determine addressing requirements (see Command Definitions).
Addresses are typically ignored by die (LUNs) that are busy (RDY = 0); however, some
addresses are accepted by die (LUNs) even when they are busy; for example, like ad-
dress cycles that follow the READ STATUS ENHANCED (78h) command.
Figure 20: Asynchronous Address Latch Cycle
CLE
tCLS
tCS
CE#
tWC
tWP
tWH
WE#
tALS
tALH
ALE
tDS tDH
DQx
Col
add 1
Col
add 2
Row
add 1
Row
add 2
Row
add 3
Don’t Care
Undefined
PDF: 09005aef83d2277a
Rev. A 11/09 EN
30
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©2009 Micron Technology, Inc. All rights reserved.
 

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