FQP11N40CT View Datasheet(PDF) - Fairchild Semiconductor
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FQP11N40CT Datasheet PDF : 10 Pages
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Typical Performance Characteristics
Figure 1. On-Region Characteristics
VGS
Top : 15.0 V
10.0 V
8.0 V
101
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
100
Notes :
1. 250μs Pulse Test
2. TC = 25°C
10-1
100
101
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
2.0
VGS = 10V
1.5
1.0
VGS = 20V
0.5
Note : TJ = 25°C
0
5
10
15
20
25
30
35
40
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
2000
1800
1600
1400
1200
1000
800
600
400
200
0
10-1
Ciss
Coss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Crss
Notes ;
1. VGS = 0 V
2. f = 1 MHz
100
101
VDS, Drain-Source Voltage [V]
Figure 2. Transfer Characteristics
101
150°C
25°C
100
-55°C
10-1
2
Notes :
1. VDS = 40V
2. 250μs Pulse Test
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
101
100
150°C
25°C
Notes :
1. VGS = 0V
2. 250μs Pulse Test
10-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-Drain voltage [V]
Figure 6. Gate Charge Characteristics
12
10
VDS = 100V
VDS = 250V
8
VDS = 400V
6
4
2
Note : ID = 10.5A
0
0
5
10
15
20
25
30
QG, Total Gate Charge [nC]
©2003 Fairchild Semiconductor Corporation
3
FQP11N40C / FQPF11N40C Rev. C1
www.fairchildsemi.com
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