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Z00607MA1BA2-ND View Datasheet(PDF) - STMicroelectronics

Part Name
Description
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Z00607MA1BA2-ND
ST-Microelectronics
STMicroelectronics ST-Microelectronics
Z00607MA1BA2-ND Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
Z00607
Characteristcs
Figure 1.
Maximum power dissipation
versus RMS on-state current
(full cycle)
Figure 2.
Relative variation of gate trigger
current, holding current and
latching current versus junction
temperature (typical values)
P(W)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
IT(RMS)(A)
0.0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
IGT, IH, IL [Tj] / IGT, IH, IL [Tj=25°C]
2.5
2.0
IGT
1.5
IH & IL
1.0
0.5
Tj (°C)
0.0
-40
-20
0
20
40
60
80
100
120
Figure 3.
Surge peak on-state current versus Figure 4.
number of cycles
Non-repetitive surge peak
on-state current for a sinusoidal
pulse with width tp <
corresponding value
10
of
ms
I2t
and
ITSM (A)
10
9
8
7
6
5
4
Repetitive
Tamb = 25°C
3
2
1
0
1
Non repetitive
Tj initial = 25°C
Number of cycles
10
100
t=20ms
One cycle
1000
ITSM (A), I2t (A2s)
200.0
100.0
dI/dt limitation:
20A/µs
10.0
Tj initial = 25°C
ITSM
1.0
0.1
0.01
tp (ms)
0.10
1.00
I2t
10.00
Figure 5. On-state characteristics
(maximum values)
Figure 6.
Relative variation of critical rate
of decrease of main current versus
(dV/dt)c (typical values)
ITM(A)
10.0
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
10.0
8.0
Tj = Tjmax.
1.0
Tj = 25°C
6.0
4.0
Tj=max.
Vt0=0.95 V
Rd=420 mΩ
2.0
VTM (V)
0.1
(dV/dt)c (V/µs)
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0.1
1.0
10.0
3/7
 

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