I16NM50N View Datasheet(PDF) - STMicroelectronics

Part Name

Description

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I16NM50N

N-channel 500 V - 0.21 Ω - 15 A MDmesh™ II Power MOSFET D2PAK - I2PAK - TO-220 - TO-247- TO-220FP

STMicroelectronics 

STB16NM50N - STF/I16NM50N - STP16NM50N - STW16NM50N

Electrical characteristics

Table 7. Switching times

Symbol

Parameter

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Test conditions

VDD = 250 V, ID = 7.5 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 18)

Min. Typ Max Unit

20

ns

15

ns

60

ns

16

ns

Table 8. Source drain diode

Symbol

Parameter

Test conditions

Min. Typ Max Unit

ISD

ISDM

VSD(1)

Source-drain current

Source-drain current (pulsed)

Forward on voltage

ISD = 15 A, VGS=0

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD =15 A, di/dt =100 A/µs,

VDD = 100 V

(see Figure 23)

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

VDD = 100 V

di/dt =100 A/µs, ISD = 15 A

Tj = 150 °C (see Figure 23)

1. Pulsed: pulse duration = 300µs, duty cycle 1.5%

15 A

60 A

1.3 V

400

ns

5

µC

24

A

500

ns

6

µC

24

A

5/18

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