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I16NM50N View Datasheet(PDF) - STMicroelectronics

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I16NM50N Datasheet PDF : 18 Pages
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STB16NM50N - STF/I16NM50N - STP16NM50N - STW16NM50N
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
D²PAK/I²PAK
TO-220/TO-247
TO-220FP
Unit
VDS
Drain-source voltage (VGS=0)
VGS
Gate-source voltage
ID
Drain current (continuous) at TC = 25°C
ID
Drain current (continuous) at TC = 100°C
IDM (2) Drain current (pulsed)
PTOT Total dissipation at TC = 25°C
dv/dt (3) Peak diode recovery voltage slope
VISO
Tstg
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1s;TC=25°C)
Storage temperature
Tj
Max. operating junction temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD 15A, di/dt 400A/µs, VDD = 80% V(BR)DSS
Table 3. Thermal data
500
± 25
15
9.4
60
125
15
15 (1)
9.4 (1)
60 (1)
30
V
V
A
A
A
W
V/ns
--
2500
V
-55 to 150
°C
150
°C
Symbol
Parameter
Value
Unit
TO-220 I²PAK D²PAK TO-247 TO-220FP
Rthj-case
Rthj-amb
Rthj-pcb
Tl
Thermal resistance junction-
case max
Thermal resistance junction-
amb max
Thermal resistance junction-
pcb max
Maximum lead temperature for
soldering purposes
1
62.5
--
50
--
--
30
--
300
4.2 °C/W
62.5 °C/W
--
°C/W
°C
Table 4. Avalanche characteristics
Symbol
Parameter
IAS
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
Single pulse avalanche energy
EAS
(starting Tj=25°C, ID=IAS, VDD= 50V)
Max value
Unit
6
A
470
mJ
3/18
 

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