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I15NM60N View Datasheet(PDF) - STMicroelectronics

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I15NM60N Datasheet PDF : 18 Pages
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STB15NM60N - STF/I15NM60N - STP15NM60N - STW15NM60N
Electrical characteristics
Table 6. Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
VDD = 300V, ID = 7A,
RG = 4.7Ω, VGS = 10V
(see Figure 17)
Min Typ Max Unit
12
ns
14
ns
80
ns
30
ns
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min Typ Max Unit
ISD
ISDM (1)
VSD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 14A, VGS=0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD =14A, di/dt =100A/µs,
VDD = 100V, Tj = 25°C
(see Figure 19)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VDD = 100V
di/dt =100A/µs, ISD = 14A
Tj = 150°C (see Figure 19)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
14 A
56 A
1.3 V
390
ns
5
µC
25
A
500
ns
7
µC
25
A
5/18
 

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