datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

I15NM60N View Datasheet(PDF) - STMicroelectronics

Part Name
Description
View to exact match
I15NM60N Datasheet PDF : 18 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Electrical characteristics
STB15NM60N - STF/I15NM60N - STP15NM60N - STW15NM60N
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 1mA, VGS= 0
600
V
dv/dt(1)
Drain-source voltage slope
VDD = 480V,ID = 14A,
VGS = 10V
30
V/ns
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS = Max rating,@125°C
1
µA
100 µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±20V
100 nA
VGS(th) Gate threshold voltage
VDS= VGS, ID = 250µA
2
3
4
V
RDS(on)
Static drain-source on
resistance
VGS= 10V, ID= 7A
0.270 0.299
1. Value measured at turn off under inductive load
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
gfs(1)
Ciss
Coss
Crss
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =15V, ID= 7A
VDS = 50V, f =1MHz,
VGS = 0
10
S
1250
pF
100
pF
10
pF
Coss
(2)
eq.
Equivalent output
capacitance
VGS = 0, VDS = 0V to 480V
137
pF
f=1MHz Gate DC Bias=0
Rg Gate input resistance
Test signal level=20mV
6.0
open drain
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD = 480V, ID = 14A
VGS = 10V
(see Figure 18)
37
nC
6
nC
18
nC
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
4/18
 

Share Link: 

datasheetbank.com [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]