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I15NM60N View Datasheet(PDF) - STMicroelectronics

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Description
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I15NM60N Datasheet PDF : 18 Pages
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STB15NM60N - STF/I15NM60N - STP15NM60N - STW15NM60N
1
Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS
Drain-source voltage (VGS=0)
VGS
Gate-source voltage
ID
Drain current (continuous) at TC = 25°C
ID
Drain current (continuous) at TC = 100°C
IDM (2) Drain current (pulsed)
PTOT Total dissipation at TC = 25°C
dv/dt (3) Peak diode recovery voltage slope
VISO
Tj
Tstg
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1s;TC=25°C)
Operating junction temperature
Storage temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD 14A, di/dt 400A/µs, VDD = 80% V(BR)DSS
Table 2. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-amb max
Tl
Maximum lead temperature for soldering
purposes
Value
D²PAK/I²PAK
TO-220/TO-247
TO-220FP
Unit
600
V
± 25
V
14
14 (1)
A
9
9(1)
A
56
56 (1)
A
125
30
W
15
V/ns
--
2500
V
-55 to 150
°C
D²PAK/I²PAK
TO-220/TO-247
TO-220FP
Unit
1
4.2
62.5
°C/W
°C/W
300
°C
Table 3. Avalanche characteristics
Symbol
Parameter
IAS
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
Single pulse avalanche energy
EAS
(starting Tj=25°C, ID=IAS, VDD= 50V)
Max value
Unit
6
A
300
mJ
3/18
 

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