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STA506 View Datasheet(PDF) - STMicroelectronics

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STA506
ST-Microelectronics
STMicroelectronics ST-Microelectronics
STA506 Datasheet PDF : 14 Pages
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STA506
Table 4. ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCE
DC Supply Voltage (Pin 4,7,12,15)
Vmax Maximum Voltage on pins 23 to 32 (logic reference)
Ptot
Power Dissipation (Tcase = 70°C)
Top
Operating Temperature Range
Tstg, Tj Storage and Junction Temperature
Value
40
5.5
50
0 to 70
-40 to 150
Unit
V
V
W
°C
°C
Table 5. (*) RECOMMENDED OPERATING CONDITIONS
Symbol
VCC
VL
Tamb
DC Supply Voltage
Input Logic Reference
Ambient Temperature
Parameter
(*) performances not guaranteed beyond recommended operating conditions
Table 6. THERMAL DATA
Symbol
Tj-case
TjSD
Twarn
thSD
Parameter
Thermal Resistance Junction to Case (thermal pad)
Thermal shut-down junction temperature
Thermal warning temperature
Thermal shut-down hysteresis
Min.
9.0
2.7
0
Typ.
3.3
Max.
36.0
5.0
70
Unit
V
v
°C
Min.
Typ.
150
130
25
Max.
1.5
Unit
°C/W
°C
°C
°C
Table 7. ELECTRICAL CHARACTERISTCS: refer to circuit in Fig.1 (VL = 3.3V; VCC = 32V; RL = 8Ω;
fsw = 384KHz; Tamb = 25°C unless otherwise specified)
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
RdsON Power Pchannel/Nchannel
MOSFET RdsON
Id=1A
200 270 m
Idss Power Pchannel/Nchannel
leakage Idss
VCC =35V
50
µA
gN Power Pchannel RdsON
Matching
Id=1A
95
%
gP Power Nchannel RdsON
Matching
Id=1A
95
%
Dt_s Low current Dead Time (static) see test circuit no.1; see fig. 3
10
20
ns
Dt_d High current Dead Time (dinamic) L=22µH; C = 470nF; RL = 8
Id=3.5A; see fig. 5
50
ns
td ON Turn-on delay time
Resistive load
100
ns
td OFF Turn-off delay time
Resistive load
100
ns
tr
Rise time
Resistive load; as fig.3
25
ns
tf
Fall time
Resistive load; as fig. 3
25
ns
VCC Supply voltage operating voltage
9
36
V
VIN-H High level input voltage
VL/2
V
+300mV
4/14
 

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