G1118 View Datasheet(PDF) - Hamamatsu Photonics
Part Name
Description
View to exact match
G1118 Datasheet PDF : 4 Pages
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sSpectral response
0.5
(Typ. Ta=25 ˚C)
0.4
0.3
0.2
0.1
0
200
400
600
WAVELENGTH (nm)
800
KGPDB0019EA
sRise time vs. load resistance
10 ms
(Typ. Ta=25 ˚C, VR=0 V)
1 ms
G1117, G1120
G1116
100 µs
10 µs
1 µs
G1115, G1118
G3067, G2711-01
100 ns102
103
104
105
LOAD RESISTANCE (Ω)
106
KGPDB0021EA
sShunt resistance vs. ambient temperature
10 TΩ
1 TΩ
(Typ. VR=10 mV)
G1115, G1118
G3067, G2711-01
G1116
100 GΩ
10 GΩ
1 GΩ
100 MΩ
G1117, G1120
10 MΩ
-20
0
20
40
60
AMBIENT TEMPERATURE (˚C)
80
KGPDB0023EA
GaAsP photodiode Diffusion type
sPhoto sensitivity temperature characteristic
(Typ.)
+1.5
+1.0
+0.5
0
-0.5
200
400
600
WAVELENGTH (nm)
800
KGPDB0020EA
sDark current vs. reverse voltage
1 nA
(Typ. Ta=25 ˚C)
100 pA
10 pA
G1117, G1120
G1116
1 pA
100 fA
0.001
G1115, G1118
G2711-01, G3067
0.01
0.1
1
10
REVERSE VOLTAGE (V)
KGPDB0022EA
sShort circuit current linearity
(Typ. Ta=25 ˚C, A light source fully illuminated)
100
10-2
RL=100 Ω
10-4
10-6
10-8
10-10
10-12
10-14
10-1160-16
10-14
Refer to NEP value in characteristic table.
10-12 10-10 10-8 10-6 10-4 10-2 100
INCIDENT LIGHT LEVEL (lx)
KGPDB0008EA
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