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K10N60-2008 View Datasheet(PDF) - Infineon Technologies

Part NameK10N60(2008) Infineon
Infineon Technologies Infineon
DescriptionFast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode
K10N60 Datasheet PDF : 14 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
35A
30A
25A
20A
15A
10A
5A
VGE=20V
15V
13V
11V
9V
7V
5V
0A
0V
1V
2V
3V
4V
5V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristics
(Tj = 25°C)
SKP10N60A
SKW10N60A
35A
30A
25A
20A
15A
10A
5A
VGE=20V
15V
13V
11V
9V
7V
5V
0A
0V
1V
2V
3V
4V
5V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristics
(Tj = 150°C)
35A
30A
Tj=+25°C
+150°C
25A
20A
15A
10A
5A
0A
0V
2V
4V
6V
8V
10V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristics
(VCE = 10V)
3,5V
3,0V
IC = 2 0 A
2,5V
2,0V
IC = 1 0 A
IC = 5 A
1,5V
0°C
50°C
100°C
150°C
Tj, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(VGE = 15V)
5
Rev. 2.3 Sep 08
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Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode

● 75% lower Eoff compared to previous generation combined with low conduction losses
● Short circuit withstand time – 10 μs
● Designed for:
   - Motor controls
   - Inverter
● NPT-Technology for 600V applications offers:
   - very tight parameter distribution
   - high ruggedness, temperature stable behaviour
   - parallel switching capability
● Very soft, fast recovery anti-parallel Emitter Controlled Diode
● Pb-free lead plating; RoHS compliant
● Qualified according to JEDEC1 for target applications
● Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

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