datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

K0900E70 View Datasheet(PDF) - Teccor Electronics

Part Name
Description
View to exact match
K0900E70
Teccor-Electronics
Teccor Electronics Teccor-Electronics
K0900E70 Datasheet PDF : 6 Pages
1 2 3 4 5 6
Sidac
Data Sheets
Type
Part No.
(10)
IT(RMS)
(7) (8)
VDRM
VBO
(1)
IDRM
IBO
(2)
IH
(3) (4)
TO-92
DO-15X
TO-202
DO-214
See “Package Dimensions” section for variations. (9)
K0900E70
K0900G
K0900S
K1050E70
K1050G
K1050S
K1100E70
K1100G
K1100S
K1200E70
K1200G
K1200S
K1300E70
K1300G
K1300S
K1400E70
K1400G
K1400S
K1500E70
K1500G
K1500S
K2000E70
K2000G
K2000F1
K2000S
K2200E70
K2200G
K2200F1
K2200S
K2400E70
K2400G
K2400F1
K2400S
K2500E70
K2500G
K2500F1
K2500S
K3000F1
Amps
MAX
1
1
1
1
1
1
1
1
1
1
1
1
Volts
MIN
±70
±90
±90
±90
±90
±90
±90
±180
±180
±190
±200
±200
Volts
MIN
MAX
79
97
95
113
104
118
110
125
120
138
130
146
140
170
190
215
205
230
220
250
240
280
270
330
µAmps
MAX
5
5
5
5
5
5
5
5
5
5
5
5
µAmps
MAX
10
10
10
10
10
10
10
10
10
10
10
10
mAmps
TYP MAX
60
150
60
150
60
150
60
150
60
150
60
150
60
150
60
150
60
150
60
150
60
150
60
150
Specific Test Conditions
di/dt — Critical rate-of-rise of on-state current
dv/dt — Critical rate-of-rise of off-state voltage at rated VDRM;
TJ 100 °C
IBO — Breakover current 50/60 Hz sine wave
IDRM — Repetitive peak off-state current 50/60 Hz sine wave; V = VDRM
IH — Dynamic holding current 50/60 Hz sine wave; R = 100
IT(RMS) — On-state RMS current TJ 125 °C 50/60 Hz sine wave
ITSM — Peak one-cycle surge current 50/60 Hz sine wave (non-
repetitive)
RS — Switching resistance
RS
=
-(--V----B-----O----------V-----S----)
(IS IBO)
50/60 Hz sine wave
VBO — Breakover voltage 50/60 Hz sine wave
VDRM — Repetitive peak off-state voltage
VTM — Peak on-state voltage; IT = 1 A
General Notes
• All measurements are made at 60 Hz with a resistive load at an
ambient temperature of +25 °C unless otherwise specified.
• Storage temperature range (TS) is -65 °C to +150 °C.
• The case (TC) or lead (TL) temperature is measured as shown on
the dimensional outline drawings in the “Package Dimensions” sec-
tion of this catalog.
• Junction temperature range (TJ) is -40 °C to +125 °C.
• Lead solder temperature is a maximum of +230 °C for 10-second
maximum; 1/16" (1.59 mm) from case.
Electrical Specification Notes
(1) See Figure E9.5 for VBO change versus junction temperature.
(2) See Figure E9.6 for IBO versus junction temperature.
(3) See Figure E9.2 for IH versus case temperature.
(4) See Figure E9.13 for test circuit.
(5) See Figure E9.1 for more than one full cycle rating.
(6) TC 90 °C for TO-92 Sidac
TC 105 °C for TO-202 Sidacs
TL 100 °C for DO-15X
TL 90 °C for DO-214
(7) See Figure E9.14 for clarification of sidac operation.
(8) For best sidac operation, the load impedance should be near or
less than switching resistance.
(9) See package outlines for lead form configurations. When ordering
special lead forming, add type number as suffix to part number.
(10) Do not use electrically connected mounting tab or center lead.
+I
IT
IH
RS
IS
IDRM IBO
-V
RS
=
(VBO
(IS -
- VS)
IBO)
+V
VBO
VT
VS
VDRM
http://www.teccor.com
+1 972-580-7777
V-I Characteristics
E9 - 2
-I
©2002 Teccor Electronics
Thyristor Product Catalog
 

Share Link: 

datasheetbank.com [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]