G02N60(2006) View Datasheet(PDF) - Infineon Technologies

Part Name

Description

View to exact match

G02N60
(Rev.:2006)

Fast IGBT in NPT-technology

Infineon Technologies 

SGB02N60

16A

Ic

14A

12A

10A

8A

TC=80°C

6A

TC=110°C

4A

2A

Ic

0A

10Hz 100Hz 1kHz 10kHz 100kHz

f, SWITCHING FREQUENCY

Figure 1. Collector current as a function of

switching frequency

(Tj ≤ 150°C, D = 0.5, VCE = 400V,

VGE = 0/+15V, RG = 118Ω)

10A

1A

0.1A

tp=2µ s

15µs

50µs

200µs

1ms

DC

0.01A

1V

10V

100V

1000V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 2. Safe operating area

(D = 0, TC = 25°C, Tj ≤ 150°C)

35W

30W

25W

20W

15W

10W

5W

0W

25°C 50°C 75°C 100°C 125°C

TC, CASE TEMPERATURE

Figure 3. Power dissipation (IGBT) as a

function of case temperature

(Tj ≤ 150°C)

7A

6A

5A

4A

3A

2A

1A

0A

25°C 50°C 75°C 100°C 125°C

TC, CASE TEMPERATURE

Figure 4. Collector current as a function of

case temperature

(VGE ≤ 15V, Tj ≤ 150°C)

4

Rev. 2.3 Nov 06

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