G02N60(2006) View Datasheet(PDF) - Infineon Technologies
Part Name
Description
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G02N60 Datasheet PDF : 11 Pages
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SGB02N60
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Thermal resistance,
junction – ambient1)
Symbol
RthJC
RthJA
Conditions
Max. Value
Unit
4.2
K/W
40
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Dynamic Characteristic
V(BR)CES
VCE(sat)
VGE(th)
ICES
IGES
gfs
VGE=0V, IC=500µA
VGE = 15V, IC=2A
Tj=25°C
Tj=150°C
IC=150µA,VCE=VGE
VCE=600V,VGE=0V
Tj=25°C
Tj=150°C
VCE=0V,VGE=20V
VCE=20V, IC=2A
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Ciss
Coss
Crss
QGate
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current2)
LE
IC(SC)
VCE=25V,
VGE=0V,
f=1MHz
VCC=480V, IC=2A
VGE=15V
VGE=15V,tSC≤10µs
VCC ≤ 600V,
Tj ≤ 150°C
min.
600
1.7
-
3
-
-
-
-
-
-
-
-
-
-
Value
Typ.
-
1.9
2.2
4
-
-
-
1.6
142
18
10
14
7
20
Unit
max.
-V
2.4
2.7
5
µA
20
250
100 nA
-S
170 pF
22
12
18 nC
- nH
-A
1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for
collector connection. PCB is vertical without blown air.
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
2
Rev. 2.3 Nov 06
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