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SD200N View Datasheet(PDF) - Vishay Semiconductors

Part Name
Description
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SD200N Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
SD200N/R Series
Vishay High Power Products Standard Recovery Diodes
(Stud Version), 200 A
400
DC
350 180°
120°
300
90°
60°
250
30°
200
RMS Limit
150
100
50
Conduction Period
SD200N/R Series
Tj = Tj max
00.3.2KK/W/W
0.4
0.6
K/W
K/W
0.8 K/W
1.4 K/W
1.8 K/W
0
0 50 100 150 200 250 300 350 40 60 80 100 120 140 160 180
Average Forward Current (A) Maximum Allowable Ambient Temperature (°C)
Fig. 4 - Forward Power Loss Characteristics
4500
4000
3500
At Any Rated Load Condition And With
Rated Vrrm Applied Following Surge.
Initial Tj = Tj max
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
3000
2500
2000
1500 SD200N/R Series
1000
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
5000
4500
4000
3500
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial Tj = Tj max
No Voltage Reapplied
Rated Vrrm Reapplied
3000
2500
2000
1500 SD200N/R Series
1000
0.01
0.1
1
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
10000
SD200N/R Series
www.vishay.com
4
1000
Tj = 25 °C
Tj = Tj max
100
0.5 1 1.5 2 2.5 3 3.5
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
For technical questions, contact: ind-modules@vishay.com
Document Number: 93541
Revision: 17-Apr-08
 

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