RJH60F5BDPQ-A0 View Datasheet(PDF) - Renesas Electronics
Part Name
Description
View to exact match
RJH60F5BDPQ-A0 Datasheet PDF : 9 Pages
| |||
Preliminary Datasheet
RJH60F5BDPQ-A0
600V - 40A - IGBT
High Speed Power Switching
R07DS0631EJ0100
Rev.1.00
Feb 17, 2012
Features
Low collector to emitter saturation voltage
VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C)
Built in fast recovery diode in one package
Trench gate and thin wafer technology
High speed switching
tf = 68 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25°C, inductive load)
Outline
RENESAS Package code: PRSS0003ZH-A
(Package name: TO-247A)
C
4
123
1. Gate
2. Collector
G
3. Emitter
4. Collector
E
Absolute Maximum Ratings
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25 °C
Tc = 100 °C
Collector peak current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal impedance (IGBT)
Junction to case thermal impedance (Diode)
Junction temperature
Storage temperature
Notes: 1. Pulse width limited by safe operating area.
2. PW 5 s, duty cycle 1%
Symbol
VCES
VGES
IC
IC
ic(peak) Note1
iDF(peak) Note2
PC
j-c
j-cd
Tj
Tstg
Ratings
600
±30
80
40
160
100
260.4
0.48
1.1
150
–55 to +150
(Tc = 25°C)
Unit
V
V
A
A
A
A
W
°C/W
°C/W
°C
°C
R07DS0631EJ0100 Rev.1.00
Feb 17, 2012
Page 1 of 8
|
|
Share Link: 