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MAC228A8 View Datasheet(PDF) - ON Semiconductor

Part NameMAC228A8 ON-Semiconductor
ON Semiconductor ON-Semiconductor
DescriptionTRIACS 8 AMPERES RMS 200 − 800 VOLTS
MAC228A8 Datasheet PDF : 5 Pages
1 2 3 4 5
MAC228A Series
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Value
Unit
Peak Repetitive Off−State Voltage, (Note 1)
(TJ = −40 to 110°C, Sine Wave, 50 to 60 Hz, Gate Open)
MAC228A4
MAC228A6
MAC228A8
MAC228A10
VDRM,
VRRM
V
200
400
600
800
On-State RMS Current, (TC = 80°C) − Full Cycle Sine Wave 50 to 60 Hz
Peak Non−Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz, TJ = 110°C)
Circuit Fusing Considerations, (t = 8.3 ms)
IT(RMS)
ITSM
I2t
8.0
A
80
A
26
A2s
Peak Gate Current, (t v 2 ms, TC = 80°C)
Peak Gate Voltage, (t v 2 ms, TC = 80°C)
Peak Gate Power, (t v 2 ms, TC = 80°C)
Average Gate Power, (t v 8.3 ms, TC = 80°C)
Operating Junction Temperature Range
Storage Temperature Range
Mounting Torque
IGM
VGM
PGM
PG(AV)
TJ
Tstg
"2.0
A
"10
V
20
W
0.5
W
−40 to 110
°C
−40 to 150
°C
8.0
in lb
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such
that the voltage ratings of the devices are exceeded.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance − Junction−to−Case
Thermal Resistance − Junction−to−Ambient
Maximum Lead Temperature for Soldering Purposes 1/8from Case for 10 Seconds
Symbol
RqJC
RqJA
TL
Value
2.0
62.5
260
Unit
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current, (VD = Rated VDRM, VRRM; Gate Open) TJ = 25°C
TJ = 110°C
IDRM,
IRRM
10
mA
2.0 mA
ON CHARACTERISTICS
Peak On-State Voltage, (ITM = "11 A Peak, Pulse Width v 2 ms, Duty Cycle v 2%)
VTM
1.8
V
Gate Trigger Current (Continuous DC), (VD = 12 V, RL = 100 W)
MT2(+), G(+); MT2(+), G(−); MT2(−), G(−)
MT2(−), G(+)
IGT
mA
5.0
10
Gate Trigger Voltage (Continuous DC), (VD = 12 V, RL = 100 W)
MT2(+), G(+); MT2(+), G(−); MT2(−), G(−)
MT2(−), G(+)
VGT
V
2.0
2.5
Gate Non−Trigger Voltage (Continuous DC), (VD = 12 V, TC = 110°C, RL = 100 W)
All Four Quadrants
VGD
0.2
V
Holding Current, (VD = 12 Vdc, Initiating Current = "200 mA, Gate Open)
Gate−Controlled Turn−On Time, (VD = Rated VDRM, ITM = 16 A Peak, IG = 30 mA)
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off-State Voltage,
(VD = Rated VDRM, Exponential Waveform, TC = 110°C)
Critical Rate of Rise of Commutation Voltage, (VD = Rated VDRM, ITM = 11.3 A,
Commutating di/dt = 4.1 A/ms, Gate Unenergized, TC = 80°C)
IH
tgt
dv/dt
dv/dt(c)
15 mA
1.5
ms
25
− V/ms
5.0
− V/ms
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Designed primarily for industrial and consumer applications for full−wave control of AC loads such as appliance controls, heater controls, motor controls, and other power switching applications.

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