MA4E2508H View Datasheet(PDF) - Tyco Electronics

Part Name

Description

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MA4E2508H

SURMOUNT™ Low and Medium & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair

Tyco Electronics 

SURMOUNTTM Low and Medium & High Barrier Silicon

Schottky Diodes: Anti-Parallel Pair

MA4E2508 Series

V2

Features

• Extremely Low Parasitic Capitance and

Inductance

• Surface Mountable in Microwave Circuits, No

Wirebonds Required

• Rugged HMIC Construction with Polyimide

Scratch Protection

• Reliable, Multilayer Metalization with a Diffusion

• Barrier, 100% Stabilization Bake (300°C, 16

hours)

• Lower Susceptibility to ESD Damage

Description and Applications

The MA4E2508 SurMount™ Anti-Parallel Diode Series

are Silicon Low, Medium & High Barrier Schottky

Devices fabricated with the patented Heterolithic

Microwave Integrated Circuit (HMIC) process. HMIC

circuits consist of Silicon pedestals which form

diodes or via conductors embedded in a glass

dielectric, which acts as the low dispersion, low loss,

microstrip transmission medium. The combination of

silicon and glass allows HMIC devices to have

excellent loss and power dissipation characteristics

in a low profile, reliable device.

The Surmount Schottky devices are excellent

choices for circuits requiring the small parasitics of a

beam lead device coupled with the superior

mechanical performance of a chip. The SurMount

structure employs very low resistance silicon vias to

connect the Schottky contacts to the metalized

mounting pads on the bottom surface of the chip.

These devices are reliable, repeatable, and a lower

cost performance solution to conventional devices.

They have lower susceptibility to electrostatic

discharge than conventional beam lead Schottky

diodes.

The multi-layer metalization employed in the

fabrication of the Surmount Schottky junctions

includes a platinum diffusion barrier, which permits

all devices to be subjected to a 16-hour

non-operating stabilization bake at 300°C.

The “ 0502 ” outline allows for Surface Mount

placement and multi- functional polarity orientations.

The MA4E2508 Family of SurMount Schottky diodes

are recommended for use in microwave circuits

through Ku band frequencies for lower power

applications such as mixers, sub-harmonic mixers,

detectors and limiters. The HMIC construction

facilitates the direct replacement of more fragile

beam lead diodes with the corresponding Surmount

diode, which can be connected to a hard or soft

substrate circuit with solder.

Case Style 1112

A

B

D

E

C

D

Dim

A

B

C

D Sq.

E

Inches

Min.

0.0445

Max.

0.0465

0.0169

0.0040

0.0128

0.0128

0.0189

0.0080

0.0148

0.0148

Millimeters

Min.

1.130

Max.

1.180

0.430

0.102

0.325

0.325

0.480

0.203

0.375

0.375

Equivalent Circuit

1

M/A-COM Inc. and its affiliates reserve the right to make changes to the

product(s) or information contained herein without notice. M/A-COM makes

no warranty, representation or guarantee regarding the suitability of its

products for any particular purpose, nor does M/A-COM assume any liability

whatsoever arising out of the use or application of any product(s) or

information.

• North America Tel: 800.366.2266 / Fax: 978.366.2266

• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300

• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

Visit www.macom.com for additional data sheets and product information.

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