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M93C46-MB3G/S View Datasheet(PDF) - STMicroelectronics

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M93C46-MB3G/S Datasheet PDF : 37 Pages
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Revision history
M93C86, M93C76, M93C66, M93C56, M93C46
Table 34. Document revision history (continued)
Date
Revision
Changes
31-Jul-2007
29-Jan-2007
Document reformatted. TSSOP8 3 × 3 mm (DS) package removed.
Erase/Write Enable (EWEN) instruction replaced by Write Enable
(WEN). Erase/Write Disable (EWDS) instruction replaced by Write
Disable (WDS).
Section 7: Initial delivery state modified, ACTIVE POWER AND
STANDBY POWER MODES section removed.
ICC1 test conditions modified in Table 15, Table 16, Table 17, Table 18
and Table 19. Note 1 added to Table 15.
7
tW parameter description modified in Table 20, Table 21, Table 22 and
Table 23..
SO8 narrow and UFDFPN8 package specifications updated (see
Section 12: Package mechanical data).
Table 29, Table 30, Table 31, Table 32 and Table 33 added.
Blank option removed under Plating technology in Table 27: TSSOP8 –
8 lead thin shrink small outline, package mechanical data.
Section 2: Connecting to the serial bus added. Device grade 7 removed.
Small text changes.
M93C76-R root part number added.
Section 2: Connecting to the serial bus modified (pull-down resitor
added to Figure 3: Bus master and memory devices on the serial bus
and paragraph added).
Section 3.1.2: Power-up conditions corrected.
8
TLEAD modified in Table 8: Absolute maximum ratings.
VOH min guaranteed at a higher value in DC characteristics tables 15,
16, 17 and 18.
M93C56-R is also offered in TSSOP8 package (see Table 30).
Package mechanical inch values calculated from mm and rounded to 4
decimal digits in Section 12: Package mechanical data
TSSOP8 (DW) package specifications updated.
36/37
 

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