SST29EE512 View Datasheet(PDF) - Silicon Storage Technology

Part Name

Description

View to exact match

SST29EE512

512 Kbit (64K x8) Page-Mode EEPROM

Silicon Storage Technology 

512 Kbit Page-Mode EEPROM

SST29EE512 / SST29LE512 / SST29VE512

Data Sheet

TABLE 7: RECOMMENDED SYSTEM POWER-UP TIMINGS

Symbol

Parameter

Minimum

Units

TPU-READ1

TPU-WRITE1

Power-up to Read Operation

Power-up to Write Operation

100

µs

5

ms

T7.0 301

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

TABLE 8: CAPACITANCE (Ta = 25°C, f=1 Mhz, other pins open)

Parameter

Description

Test Condition

Maximum

CI/O1

I/O Pin Capacitance

VI/O = 0V

12 pF

CIN1

Input Capacitance

VIN = 0V

6 pF

T8.0 301

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

TABLE 9: RELIABILITY CHARACTERISTICS

Symbol

Parameter

Minimum Specification

Units Test Method

NEND1

TDR1

Endurance

Data Retention

10,000

100

Cycles JEDEC Standard A117

Years JEDEC Standard A103

ILTH1

Latch Up

100

mA JEDEC Standard 78

T9.5 301

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

©2001 Silicon Storage Technology, Inc.

9

S71060-06-000 6/01 301

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