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E-LIS2L02AS4 View Datasheet(PDF) - STMicroelectronics

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E-LIS2L02AS4 Datasheet PDF : 14 Pages
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LIS2L02AS4
Table 4. Electrical Characteristics1
(Temperature range -40°C to +85°C) All the parameters are specified @ Vdd =3.3V, T=25°C unless oth-
erwise noted
Symbol
Parameter
Test Condition
Min.
Typ.2
Vdd Supply Voltage
2.4
3.3
Idd Supply Current
mean value
0.85
PD pin connected
to GND
IddPdn Supply Current in Power
rms value
2
Down Mode
PD pin connected
to Vdd
Vst Self Test Input
Logic 0 level
0
Logic 1 level
2.2
Rout Output Impedance
80
110
Cload Capacitive Load Drive3
320
Ton Turn-On Time at exit from
Power Down mode
Cload in µF
550*Cload+0.3
Notes: 1. The product is factory calibrated at 3.3V.
2. Typical specifications are not guaranteed
3. Minimum resonance frequency Fres=1.5kHz. Sensor bandwidth=1/(2*π*110K*Cload) with Cload>1nF
Max.
5.25
1.5
5
0.8
Vdd
140
Unit
V
mA
µA
V
V
k
pF
ms
3 Absolute Maximum Rating
Stresses above those listed as “absolute maximum ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the device under these conditions is not implied.
Exposure to maximum rating conditions for extended periods may affect device reliability.
Table 5. Absolute Maximum Rating
Symbol
Ratings
Vdd
Supply Voltage
Vin
Input Voltage on any control pin (FS, PD, ST)
APOW Acceleration (Any axis, Powered, Vdd=3.3V)
AUNP Acceleration (Any axis, Not powered)
TSTG
ESD
Storage Temperature Range
Electrostatic Discharge Protection
Maximum Value
Unit
-0.3 to 7
V
-0.3 to Vdd +0.3
V
3000g for 0.5 ms
10000g for 0.1 ms
3000g for 0.5 ms
10000g for 0.1 ms
-40 to +125
°C
2 (HBM)
kV
200 (MM)
V
1500 (CDM)
V
This is a Mechanical Shock sensitive device, improper handling can cause permanent damages to the part
This is an ESD sensitive device, improper handling can cause permanent damages to the part
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