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IRFU310A View Datasheet(PDF) - Fairchild Semiconductor

Part NameIRFU310A Fairchild
Fairchild Semiconductor Fairchild
DescriptionAdvanced Power MOSFET
IRFU310A Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
IRFR/U310A
1&+$11(/
32:(5 026)(7
Fig 7. Breakdown Voltage vs. Temperature
1.2
1.1
1.0
0.9
@ Notes :
1. VGS = 0 V
2. ID = 250 µA
0.8
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Junction Temperature [oC]
Fig 8. On-Resistance vs. Temperature
3.0
2.5
2.0
1.5
1.0
@ Notes :
0.5
1. VGS = 10 V
2. ID = 1.0 A
0.0
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Junction Temperature [oC]
Fig 9. Max. Safe Operating Area
Operation in This Area
101
is Limited by R DS(on)
100 µs
1 ms
100
10 ms
DC
10-1
@ Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
10-2100
101
102
103
VDS , Drain-Source Voltage [V]
Fig 10. Max. Drain Current vs. Case Temperature
2.0
1.5
1.0
0.5
0.0
25
50
75
100
125
150
Tc , Case Temperature [oC]
Fig 11. Thermal Response
D=0.5
100 0.2
0.1
0.05
0.02
10-1 0.01
single pulse
@ Notes :
1.
Z
θ
J
C
(t)=4.76
o C/W
Max.
2. Duty Factor, D=t1 /t2
3.
TJ
M
-TC
=PD
M
*Z
θ
J
C
(t)
P
DM
t1
t2
10- 5
10- 4
10- 3
10- 2
10- 1
100
101
t1 , Square Wave Pulse Duration [sec]
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FEATURES
♦ Avalanche Rugged Technology
♦ Rugged Gate Oxide Technology
♦ Lower Input Capacitance
♦ Improved Gate Charge
♦ Extended Safe Operating Area
♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V
♦ Low RDS(ON): 2.815Ω (Typ.)

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