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IRFU310A View Datasheet(PDF) - Fairchild Semiconductor

Part NameIRFU310A Fairchild
Fairchild Semiconductor Fairchild
DescriptionAdvanced Power MOSFET
IRFU310A Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
1&+$11(/
32:(5 026)(7
Fig 1. Output Characteristics
VGS
Top : 15V
10 V
8.0 V
7.0 V
100
6.0 V
5.5 V
5.0 V
Bottom : 4.5V
10-1
10-120-1
@ Notes :
1. 250 µs Pulse Test
2. TC = 25 oC
100
101
VDS , Drain-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
8
6
VGS = 10 V
4
VGS = 20 V
2
@ Note : TJ = 25 oC
0
0
1
2
3
4
5
6
ID , Drain Current [A]
Fig 5. Capacitance vs. Drain-Source Voltage
400
Ciss= Cgs+ Cgd ( Cds= shorted )
Coss= Cds+ Cgd
Crss= Cgd
300
C iss
200
C oss
100
C rss
@ Notes :
1. VGS = 0 V
2. f = 1 MHz
0
100
101
VDS , Drain-Source Voltage [V]
IRFR/U310A
Fig 2. Transfer Characteristics
100
150 oC
10-1
25 oC
- 55 oC
@ Notes :
1. VGS = 0 V
2. VDS = 50 V
3. 250 µs Pulse Test
10-2
2
4
6
8
10
VGS , Gate-Source Voltage [V]
Fig 4. Source-Drain Diode Forward Voltage
100
10-1
10-2
0.2
150 oC
25 oC
@ Notes :
1. VGS = 0 V
2. 250 µs Pulse Test
0.4
0.6
0.8
1.0
1.2
VSD , Source-Drain Voltage [V]
Fig 6. Gate Charge vs. Gate-Source Voltage
VDS = 80 V
10
VDS = 200 V
VDS = 320 V
5
@ Notes : ID = 2.0 A
0
0
2
4
6
8
10
QG , Total Gate Charge [nC]
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FEATURES
♦ Avalanche Rugged Technology
♦ Rugged Gate Oxide Technology
♦ Lower Input Capacitance
♦ Improved Gate Charge
♦ Extended Safe Operating Area
♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V
♦ Low RDS(ON): 2.815Ω (Typ.)

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