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IRFU310A View Datasheet(PDF) - Fairchild Semiconductor

Part NameIRFU310A Fairchild
Fairchild Semiconductor Fairchild
DescriptionAdvanced Power MOSFET


IRFU310A Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
IRFR/U310A
1&+$11(/
32:(5 026)(7
Electrical Characteristics (TC=25°C unless otherwise specified)
Symbol
BVDSS
BV/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Characteristic
Min. Typ. Max. Units
Test Condition
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain ( Miller ) Charge
400 -- -- V
-- 0.53 -- V/°C
2.0 -- 4.0 V
-- -- 100 nA
-- -- -100
-- -- 10
-- -- 100 µA
-- -- 3.6
-- 1.10 --
-- 215 280
-- 35 42 pF
-- 13 17
-- 11 30
-- 15 40
ns
-- 38 90
-- 13 35
-- 10 14
-- 1.8 -- nC
-- 5.4 --
VGS=0V,ID=250µA
ID=250µA See Fig 7
VDS=5V,ID=250µA
VGS=30V
VGS=-30V
VDS=400V
VDS=320V,TC=125°C
VGS=10V,ID=0.85A (4)
VDS=50V,ID=0.85A
(4)
VGS=0V,VDS=25V,f =1MHz
See Fig 5
VDD=200V,ID=2A,
RG=24
See Fig 13
(4) (5)
VDS=320V,VGS=10V,
ID=2A
See Fig 6 & Fig 12 (4) (5)
Source-Drain Diode Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
--
(1) --
-- 1.7
Integral reverse pn-diode
A
-- 6
in the MOSFET
(4) -- -- 1.5 V TJ=25°C,IS=1.7A,VGS=0V
-- 224 -- ns TJ=25 °C,IF=2A
-- 0.87 -- µC diF/dt=100A/µs
(4)
Notes;
(1) Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
(2) L=70mH, IAS=1.7A, VDD=50V, RG=27, Starting TJ =25°C
(3) ISD 2A, di/dt 80A/µs, VDD BVDSS , Starting TJ =25°C
(4) Pulse Test: Pulse Width = 250µs, Duty Cycle 2%
(5) Essentially Independent of Operating Temperature
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FEATURES
♦ Avalanche Rugged Technology
♦ Rugged Gate Oxide Technology
♦ Lower Input Capacitance
♦ Improved Gate Charge
♦ Extended Safe Operating Area
♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V
♦ Low RDS(ON): 2.815Ω (Typ.)

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