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IRFU310A View Datasheet(PDF) - Fairchild Semiconductor

Part NameIRFU310A Fairchild
Fairchild Semiconductor Fairchild
DescriptionAdvanced Power MOSFET


IRFU310A Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
$GYDQFHG 3RZHU 026)(7
IRFR/U310A
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current: 10µA (Max.) @ VDS = 400V
Low RDS(ON): 2.815(Typ.)
BVDSS = 400 V
RDS(on) = 3.6
ID = 1.7 A
D-PAK I-PAK
2
1
1
3
2
3
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25°C)
Continuous Drain Current (TC=100°C)
Drain Current-Pulsed
(1)
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
(2)
Avalanche Current
(1)
Repetitive Avalanche Energy
(1)
Peak Diode Recovery dv/dt
(3)
Total Power Dissipation (TA=25°C) *
Total Power Dissipation (TC=25°C)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds
1. Gate 2. Drain 3. Source
Value
400
1.7
1.1
6
±30
116
1.7
2.6
4.0
2.5
26
0.21
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
Thermal Resistance
Symbol
Characteristic
Typ.
RθJC
RθJA
RθJA
Junction-to-Case
--
Junction-to-Ambient *
--
Junction-to-Ambient
--
* When mounted on the minimum pad size recommended (PCB Mount).
Max.
4.76
50
110
Units
°C/W
Rev. B
©1999 Fairchild Semiconductor Corporation
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FEATURES
♦ Avalanche Rugged Technology
♦ Rugged Gate Oxide Technology
♦ Lower Input Capacitance
♦ Improved Gate Charge
♦ Extended Safe Operating Area
♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V
♦ Low RDS(ON): 2.815Ω (Typ.)

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