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K03H1202(2013) View Datasheet(PDF) - Infineon Technologies
Part Name
Description
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K03H1202
(Rev.:2013)
HighSpeed 2-Technology with soft, fast recovery anti-parallel Emitter Controlled HE diode
Infineon Technologies
K03H1202 Datasheet PDF : 14 Pages
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IKA03N120H2
Switching Energy ZVT, Inductive Load
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-off energy
E
off
V
CC
=800V,
I
C
=3A,
V
GE
=0V/15V,
R
G
=82
, C
r2)
=4nF
T
j
=25
C
T
j
=150
C
min.
-
-
Value
typ.
0.05
0.09
Unit
max.
mJ
-
-
Power Semiconductors
4
Rev. 2.3 17.07.2013
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