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K03H1202(2013) View Datasheet(PDF) - Infineon Technologies

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K03H1202 Datasheet PDF : 14 Pages
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IKA03N120H2
Switching Characteristic, Inductive Load, at Tj=25 C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode current slope
trr
Qrr
Irrm
diF/dt
Tj=25C,
VCC=800V,IC=3A,
VGE=0V/15V,
RG=82,
L2)=180nH,
C2)=40pF
Energy losses include
“tail” and diode 3)
reverse recovery.
Tj=25C,
VR=800V, IF=3A,
RG=82
min.
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
9.2
5.2
281
29
0.14
0.15
0.29
52
0.23
9.3
723
Unit
max.
- ns
-
-
-
- mJ
-
-
- ns
- µC
-A
- A/s
Switching Characteristic, Inductive Load, at Tj=150 C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode current slope
trr
Qrr
Irrm
diF/dt
Tj=150C
VCC=800V, IC=3A,
VGE=0V/15V,
RG=82,
L2)=180nH,
C2)=40pF
Energy losses include
“tail” and diode 3)
reverse recovery.
Tj=150C
VR=800V, IF=3A,
RG=82
min.
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
9.4
6.7
340
63
0.22
0.26
0.48
112
0.52
11
661
Unit
max.
- ns
-
-
-
- mJ
-
-
- ns
- µC
-A
- A/s
2)
3)
Leakage inductance Land stray capacity Cdue
Commutation diode from device IKP03N120H2
to
dynamic
test
circuit
in
figure
E
Power Semiconductors
3
Rev. 2.3 17.07.2013
 

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