datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

K06T60(2013) View Datasheet(PDF) - Infineon Technologies

Part Name
Description
View to exact match
K06T60 Datasheet PDF : 13 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
TRENCHSTOPSeries
IKA06N60T
Switching Characteristic, Inductive Load, at Tj=25 C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during tb
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
trr
Qrr
Irrm
dirr/dt
Tj=25C,
VCC=400V,IC=6A,
VGE=0/15V,rG=23,
L=60nH,C=40pF
L, Cfrom Fig. E
Energy losses include
“tail” and diode reverse
recovery.
Tj=25C,
VR=400V, IF=6A,
diF/dt=550A/s
min.
-
-
-
-
-
-
-
-
-
-
-
Value
Typ.
9.4
5.6
130
58
0.09
0.11
0.2
123
190
5.3
450
Unit
max.
- ns
-
-
-
- mJ
-
-
- ns
- nC
-A
- A/s
Switching Characteristic, Inductive Load, at Tj=175 C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during tb
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
trr
Qrr
Irrm
dirr/dt
Tj=175C,
VCC=400V,IC=6A,
VGE=0/15V,rG=23,
L=60nH,C=40pF
L, Cfrom Fig. E
Energy losses include
“tail” and diode reverse
recovery.
Tj=175C
VR=400V, IF=6A,
diF/dt=550A/s
min.
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
8.8
8.2
165
84
0.14
0.18
0.335
180
500
7.6
285
Unit
max.
- ns
-
-
-
- mJ
-
-
- ns
- nC
-A
- A/s
IFAG IPC TD VLS
3
Rev. 2.5 20.09.2013
 

Share Link: 

datasheetbank.com [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]