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K06T60(2013) View Datasheet(PDF) - Infineon Technologies

Part Name
Description
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K06T60 Datasheet PDF : 13 Pages
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TRENCHSTOPSeries
IKA06N60T
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Symbol
RthJC
RthJCD
RthJA
Conditions
Max. Value
Unit
5.3
K/W
6.5
80
Electrical Characteristic, at Tj = 25 C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Integrated gate resistor
V(BR)CES
VCE(sat)
VF
VGE(th)
ICES
IGES
gfs
RGint
VGE=0V,
IC=0.25mA
VGE = 15V, IC=6A
Tj=25C
Tj=175C
VGE=0V, IF=6A
Tj=25C
Tj=175C
IC=0.18mA,
VCE=VGE
VCE=600V,VGE=0V
Tj=25C
Tj=175C
VCE=0V,VGE=20V
VCE=20V, IC=6A
min.
600
-
-
-
-
4.1
-
-
-
-
Value
typ.
-
1.5
1.8
1.6
1.6
4.6
-
-
-
3.6
none
Unit
max.
-V
2.05
2.05
-
5.7
µA
40
700
100 nA
-S
Ω
Dynamic Characteristic
Input capacitance
Ciss
VCE=25V,
-
Output capacitance
Coss
VGE=0V,
-
Reverse transfer capacitance
Crss
f=1MHz
-
Gate charge
QGate
VCC=480V, IC=6A
-
VGE=15V
Internal emitter inductance
LE
-
measured 5mm (0.197 in.) from case
Short circuit collector current1)
IC(SC)
VGE=15V,tSC5s
-
VCC = 400V,
Tj = 25C
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
IFAG IPC TD VLS
2
368
- pF
28
-
11
-
42
- nC
7
- nH
55
-A
Rev. 2.5 20.09.2013
 

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