G01H1202(2007) View Datasheet(PDF) - Infineon Technologies

Part Name

Description

View to exact match

G01H1202
(Rev.:2007)

HighSpeed 2-Technology

Infineon Technologies 

Figure A. Definition of switching times

Figure B. Definition of switching losses

IGB01N120H2

i,v

di /dt

F

I

F

I

rrm

t =t +t

rr S F

Q =Q +Q

rr

S

F

t

rr

t

t

S

F

QQ

S

F

10% I

t

rrm

di /dt V

90% I r r

R

rrm

Figure C. Definition of diodes

switching characteristics

τ1

r1

Tj (t)

p(t)

r1

τ2

r2

r2

τn

rn

rn

TC

Figure D. Thermal equivalent

circuit

½ Lσ

öö

DUT

(Diode)

L

Cσ

Cr

VDC

RG

DUT

(IGBT)

½ Lσ

Figure E. Dynamic test circuit

Leakage inductance Lσ = 180nH,

Stray capacitor Cσ = 40pF,

Relief capacitor Cr = 1nF (only for

ZVT switching)

Power Semiconductors

11

Rev. 2.4 Oct. 07

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