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G08T120 View Datasheet(PDF) - Infineon Technologies

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Description
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G08T120 Datasheet PDF : 12 Pages
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TrenchStop® Series
IGW08T120
q
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tj=25°C,
VCC=600V,IC=8A,
VGE=-15/15V,
RG=81,
Lσ2)=180nH,
Cσ2)=39pF
Energy losses include
“tail” and diode
reverse recovery.
min.
-
-
-
-
-
-
-
Value
typ.
40
23
450
70
0.67
0.7
1.37
Unit
max.
- ns
-
-
-
- mJ
-
-
Switching Characteristic, Inductive Load, at Tj=150 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tj=150°C,
VCC=600V, IC=8A,
VGE=-15/15V,
RG= 81,
Lσ2)=180nH,
Cσ2)=39pF
Energy losses include
“tail” and diode
reverse recovery.
min.
-
-
-
-
-
-
-
Value
typ.
40
26
570
140
1.08
1.2
2.28
Unit
max.
- ns
-
-
-
- mJ
-
-
2) Leakage inductance Lσ an d Stray capacity C σ due to dynamic test circuit in Figure E.
Power Semiconductors
3
Rev. 2.6 Nov. 09
 

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