256-Bit Nonvolatile CMOS Static RAM
s Single 5V Supply
s Fast RAM Access Times:
s Infinite EEPROM to RAM Recall
s CMOS and TTL Compatible I/O
s Power Up/Down Protection
s 100,000 Program/Erase Cycles (E2PROM)
s Low CMOS Power Consumption:
–Active: 40mA Max.
–Standby: 30µA Max.
s JEDEC Standard Pinouts:
s 10 Year Data Retention
s Commercial, Industrial and Automotive
The CAT22C10 NVRAM is a 256-bit nonvolatile memory
organized as 64 words x 4 bits. The high speed Static
RAM array is bit for bit backed up by a nonvolatile
EEPROM array which allows for easy transfer of data
from RAM array to EEPROM (STORE) and from
EEPROM to RAM (RECALL). STORE operations are
completed in 10ms max. and RECALL operations typi-
cally within 1.5µs. The CAT22C10 features unlimited
RAM write operations either through external RAM
writes or internal recalls from EEPROM. Internal false
store protection circuitry prohibits STORE operations
when VCC is less than 3.0V.
The CAT22C10 is manufactured using Catalyst’s ad-
vanced CMOS floating gate technology. It is designed
to endure 100,000 program/erase cycles (EEPROM)
and has a data retention of 10 years. The device is
available in JEDEC approved 18-lead plastic DIP and
16-lead SOIC packages.
DIP Package (L)
SOIC Package (W)
1 8 Vcc
1 7 NC
1 6 A5
1 5 I/O3
1 4 I/O2
1 6 Vcc
1 5 A5
1 4 I/O4
© 2009 SCILLC. All rights reserved.
Characteristics subject to change without notice.
Doc. No. MD-1082, Rev. R