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CAT22C10 View Datasheet(PDF) - Catalyst Semiconductor => Onsemi

Part NameCAT22C10 Catalyst
Catalyst Semiconductor => Onsemi Catalyst
Description256-Bit Nonvolatile CMOS Static RAM
CAT22C10 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
A.C. CHARACTERISTICS, Store Cycle
VCC = +5V ±10%, unless otherwise specified.
Limits
Symbol
Parameter
Min.
Max.
tSTC
Store Time
10
tSTP
Store Pulse Width
200
tSTZ(1)
Store Disable Time
100
tOST(1)
Store Enable Time
0
Units
ms
ns
ns
ns
CAT22C10
Conditions
CL = 100pF + 1TTL gate
VOH = 2.2V, VOL = 0.65V
VIH = 2.2V, VIL = 0.65V
A.C. CHARACTERISTICS, Recall Cycle
VCC = +5V ±10%, unless otherwise specified.
Symbol
tRCC
tRCP
tRCZ
tORC
tARC
Parameter
Recall Cycle Time
Recall Pulse Width
Recall Disable Time
Recall Enable Time
Recall Data Access Time
Limits
Min.
Max.
1.4
300
100
0
1.1
Units
µs
ns
ns
ns
µs
Conditions
CL = 100pF + 1TTL gate
VOH = 2.2V, VOL = 0.65V
VIH = 2.2V, VIL = 0.65V
Note:
(1) This parameter is tested initially and after a design or process change that affects the parameter.
5
Doc. No. 25018-0A 2/98 N-1
Direct download click here
 

DESCRIPTION
The CAT22C10 NVRAM is a 256-bit nonvolatile memory organized as 64 words x 4 bits. The high speed Static RAM array is bit for bit backed up by a nonvolatile E2PROM array which allows for easy transfer of data from RAM array to E2PROM (STORE) and from E2PROM to RAM (RECALL). STORE operations are completed in 10ms max. and RECALL operations typically within 1.5µs.

FEATURES
■ Single 5V Supply
■ Fast RAM Access Times:
  –200ns
  –300ns
■ Infinite E2PROM to RAM Recall
■ CMOS and TTL Compatible I/O
■ Power Up/Down Protection
■ 100,000 Program/Erase Cycles (E2PROM)
■ Low CMOS Power Consumption:
  –Active: 40mA Max.
  –Standby: 30 µA Max.
■ JEDEC Standard Pinouts:
  –18-pin DIP
  –16-pin SOIC
■ 10 Year Data Retention
■ Commercial, Industrial and Automotive Temperature Ranges

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