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CAT22C10 View Datasheet(PDF) - Catalyst Semiconductor => Onsemi

Part NameCAT22C10 Catalyst
Catalyst Semiconductor => Onsemi Catalyst
Description256-Bit Nonvolatile CMOS Static RAM
CAT22C10 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
CAT22C10
ABSOLUTE MAXIMUM RATINGS*
*COMMENT
Temperature Under Bias ................. –55°C to +125°C
Storage Temperature ....................... –65°C to +150°C
Voltage on Any Pin with
Respect to Ground(2) .............. -2.0 to +VCC +2.0V
VCC with Respect to Ground ................ -2.0V to +7.0V
Package Power Dissipation
Capability (Ta = 25°C) ................................... 1.0W
Lead Soldering Temperature (10 secs) ............ 300°C
Output Short Circuit Current(3) ........................ 100 mA
RELIABILITY CHARACTERISTICS
Symbol
NEND(1)
TDR(1)
VZAP(1)
ILTH(1)(4)
Parameter
Endurance
Data Retention
ESD Susceptibility
Latch-Up
Min.
100,000
10
2000
100
Max.
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device.
These are stress ratings only, and functional operation
of the device at these or any other conditions outside of
those listed in the operational sections of this specifica-
tion is not implied. Exposure to any absolute maximum
rating for extended periods may affect device perfor-
mance and reliability.
Units
Cycles/Byte
Years
Volts
mA
Reference Test Method
MIL-STD-883, Test Method 1033
MIL-STD-883, Test Method 1008
MIL-STD-883, Test Method 3015
JEDEC Standard 17
D.C. OPERATING CHARACTERISTICS
VCC = +5V ±10%, unless otherwise specified.
Symbol
ICC
Parameter
Current Consumption
(Operating)
Min.
Limits
Typ.
Max.
40
ISB
Current Consumption
30
(Standby)
ILI
Input Current
10
ILO
Output Leakage Current
10
VIH
High Level Input Voltage
2
VCC
VIL
Low Level Input Voltage
0
0.8
VOH
High Level Output Voltage
2.4
VOL
Low Level Output Voltage
0.4
VDH
RAM Data Holding Voltage
1.5
5.5
Unit
mA
µA
µA
µA
V
V
V
V
V
Conditions
All Inputs = 5.5V
TA = 0°C
All I/O’s Open
CS = VCC
All I/O’s Open
0 VIN 5.5V
0 VOUT 5.5V
IOH = –2mA
IOL = 4.2mA
VCC
CAPACITANCE TA = 25°C, f = 1.0 MHz, VCC = 5V
Symbol
Parameter
Max.
Unit
Conditions
CI/O(1)
CIN(1)
Input/Output Capacitance
Input Capacitance
10
pF
6
pF
VI/O = 0V
VIN = 0V
Note:
(1) This parameter is tested initially and after a design or process change that affects the parameter.
(2) The minimum DC input voltage is -0.5V. During transitions, inputs may undershoot to -2.0V for periods of less than 20 ns. Maximum DC
voltage on output pins is VCC +0.5V, which may overshoot to VCC +2.0V for periods of less than 20 ns.
(3) Output shorted for no more than one second. No more than one output shorted at a time.
(4) Latch-up protection is provided for stresses up to 100 mA on address and data pins from -1V to VCC +1V.
3
Doc. No. 25018-0A 2/98 N-1
Direct download click here
 

DESCRIPTION
The CAT22C10 NVRAM is a 256-bit nonvolatile memory organized as 64 words x 4 bits. The high speed Static RAM array is bit for bit backed up by a nonvolatile E2PROM array which allows for easy transfer of data from RAM array to E2PROM (STORE) and from E2PROM to RAM (RECALL). STORE operations are completed in 10ms max. and RECALL operations typically within 1.5µs.

FEATURES
■ Single 5V Supply
■ Fast RAM Access Times:
  –200ns
  –300ns
■ Infinite E2PROM to RAM Recall
■ CMOS and TTL Compatible I/O
■ Power Up/Down Protection
■ 100,000 Program/Erase Cycles (E2PROM)
■ Low CMOS Power Consumption:
  –Active: 40mA Max.
  –Standby: 30 µA Max.
■ JEDEC Standard Pinouts:
  –18-pin DIP
  –16-pin SOIC
■ 10 Year Data Retention
■ Commercial, Industrial and Automotive Temperature Ranges

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