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BUZ21L View Datasheet(PDF) - Infineon Technologies

Part Name
Description
View to exact match
BUZ21L
Infineon
Infineon Technologies Infineon
BUZ21L Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
BUZ 21L
Drain-source on-resistance
RDS (on) = ƒ(Tj)
parameter: ID = 10.5 A, VGS = 5 V
0.28
0.24
RDS (on)0.22
0.20
0.18
0.16
0.14
0.12
98%
typ
0.10
0.08
0.06
0.04
0.02
0.00
-60
-20
20
60
100 ˚C 160
Tj
Gate threshold voltage
VGS (th) = ƒ(Tj)
parameter: VGS = VDS, ID = 1 mA
4.6
V
4.0
VGS(th) 3.6
3.2
2.8
2.4
98%
2.0
typ
1.6
2%
1.2
0.8
0.4
0.0
-60
-20
20
60
100 ˚C 160
Tj
Typ. capacitances
C = f (VDS)
parameter:VGS = 0V, f = 1MHz
10 1
Forward characteristics of reverse diode
IF = ƒ(VSD)
parameter: Tj, tp = 80 µs
10 2
nF
C
10 0
A
IF
Ciss
10 1
10 -1
Coss
Crss
10 -2
0
5 10 15 20 25 30 V 40
VDS
Data Sheet
7
10 0
Tj = 25 ˚C typ
Tj = 150 ˚C typ
Tj = 25 ˚C (98%)
Tj = 150 ˚C (98%)
10 -1
0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0
VSD
05.99
 

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