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BFR520 View Datasheet(PDF) - NXP Semiconductors.

Part Name
Description
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BFR520
NXP
NXP Semiconductors. NXP
BFR520 Datasheet PDF : 14 Pages
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NXP Semiconductors
BFR520
NPN 9 GHz wideband transistor
Table 1. Quick reference data …continued
Symbol Parameter
Conditions
s212 insertion power gain
IC = 20 mA; VCE = 6 V;
Tamb = 25 C;
f = 900 MHz
NF
noise figure
s = opt; Tamb = 25 C
IC = 5 mA; VCE = 6 V;
f = 900 MHz
IC = 20 mA; VCE = 6 V;
f = 900 MHz
IC = 5 mA; VCE = 8 V;
f = 2 GHz
[1] Tsp is the temperature at the soldering point of the collector tab.
2. Pinning information
Min Typ Max Unit
13
14
-
dB
-
1.1 1.6 dB
-
1.6 2.1 dB
-
1.9 -
dB
Table 2.
Pin
1
2
3
Pinning
Description
base
emitter
collector
Simplified outline Symbol
3
3
1
2
1
2
sym021
3. Ordering information
Table 3. Ordering information
Type number Package
Name Description
BFR520
-
plastic surface mounted package; 3 leads
4. Marking
Table 4. Marking
Type number
BFR520
[1] * = p: Made in Hong Kong
* = t: Made in Malaysia
* = W: Made in China.
Marking code[1]
32*
Version
SOT23
BFR520
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 13 September 2011
© NXP B.V. 2011. All rights reserved.
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