BF2000 View Datasheet(PDF) - Siemens AG

Part Name

Description

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BF2000

Silicon N Channel MOSFET Tetrode

Siemens AG 

BF 2000

Electrical Characteristics at TA = 25 °C; unless otherwise specified.

Parameter

Symbol

Values

Unit

min. typ. max.

DC characteristics

Drain-source breakdown voltage

ID = 10 µA, -VG1S = 4 V, - VG2S = 4 V

V(BR)DS

12

-

-V

Gate 1 source breakdown voltage

±IG1S = 10 mA, VG2S = VDS = 0

Gate 2 source breakdown voltage

±IG2S = 10 mA, VG1S = 0 V, VDS = 0 V

±V(BR)G1SS 8

±V(BR)G2SS 8

-

12 V

-

12

Gate 1 source leakage current

±VG1S = 5 V, VG2S = VDS = 0

±IG1SS

-

-

50 nA

Gate 2 source leakage current

±VG2S = 5 V, VG1S = 0 V, VDS = 0 V

Drain current

VDS = 5 V, VG1S = 0 , VG2S = 4 V

±IG2SS

IDSS

-

-

50

-

-

1 µA

Gate 1-source pinch-off voltage

VDS = 5 V, VG2S = 4 V, ID = 200 µA

VG1S(p)

-

0.3

-V

Gate 2-source pinch-off voltage

VDS = 5 V, ID = 100 µA

VG2S(p)

-

0.2

-V

SSeemmicioconndduuctcotor rGGrorouupp

22

Au 1-09938-1-1919-081

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