BF1005 View Datasheet(PDF) - Siemens AG
Part Name
Description
View to exact match
BF1005 Datasheet PDF : 4 Pages
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Silicon N-Channel MOSFET Tetrode
• For low noise, high gain controlled
input stages up to 1GHz
• Operating voltage 5V
• Integrated stabilized bias network
BF 1005
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BF 1005
Marking Ordering Code Pin Configuration
Package
MZs
Q62702-F1498 1 = S 2 = D 3 = G2 4 = G1 SOT-143
Maximum Ratings
Parameter
Drain-source voltage
Continuos drain current
Gate 1/gate 2 peak source current
Gate 1 (external biasing)
Total power dissipation, TS ≤ 76 °C
Storage temperature
Channel temperature
Thermal Resistance
Channel - soldering point
Symbol
VDS
ID
±IG1/2SM
+VG1SE
Ptot
Tstg
Tch
Rthchs
Value
Unit
8
V
25
mA
10
3
V
200
mW
- 55 ...+150
°C
150
≤370
K/W
Note:
It is not recommended to apply external DC-voltage on Gate 1 in active mode.
SSeemmicioconndduuctcotor rGGrorouupp
11
Au 1-29958-1-1919-081
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