BF1105 View Datasheet(PDF) - Philips Electronics
Part Name
Description
View to exact match
BF1105 Datasheet PDF : 16 Pages
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Philips Semiconductors
N-channel dual-gate MOS-FETs
Product specification
BF1105; BF1105R; BF1105WR
102
handbook, halfpage
yis
(mS)
10
1
10−1
MGM251
bis
gis
handbook1, 0h3alfpage
|yrs|
(µS)
102
10
MGM252 −103
ϕrs
(deg)
ϕrs
−102
|yrs|
−10
10−2
10
102
f (MHz)
103
VDS = 5 V; VG2-S = 4 V.
ID = 12 mA; Tamb = 25 °C.
Fig.12 Input admittance as a function of frequency;
typical values.
1
−1
10
102
f (MHz)
103
VDS = 5 V; VG2-S = 4 V.
ID = 12 mA; Tamb = 25 °C.
Fig.13 Reverse transfer admittance and phase as
a function of frequency; typical values.
handbook1, 0h2alfpage
|yfs|
(mS)
10
MGM253 −102
handbook,1h0alfpage
ϕfs
(deg)
yos
(mS)
|yfs|
1
−10
10−1
ϕfs
MGM254
bos
gos
1
−1
10
102
f (MHz)
103
VDS = 5 V; VG2-S = 4 V.
ID = 12 mA; Tamb = 25 °C.
Fig.14 Forward transfer admittance and phase as
a function of frequency; typical values.
10−2
10
102
f (MHz)
103
VDS = 5 V; VG2-S = 4 V.
ID = 12 mA; Tamb = 25 °C.
Fig.15 Output admittance as a function of
frequency; typical values.
1997 Dec 02
7
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