Philips Semiconductors
N-channel dual-gate MOS-FETs
Product specification
BF1105; BF1105R; BF1105WR
handbook,1h6alfpage
ID
(mA)
12
fMGM248
8
4
0
0
2
4
6 VDS (V) 8
VG2-S = 4 V.
Tj = 25 °C.
Fig.9 Drain current as a function of drain-source
voltage; typical values.
handbook,1h6alfpage
ID
(mA)
12
MGM249
8
4
0
−8
−6
−4
−2 IG1 (µA) 0
VDS = 5 V; VG2-S = 4 V; Tj = 25 °C.
Fig.10 Drain current as a function of gate 1 current;
typical values.
110
handbook, halfpage
Vunw
(dBµV)
100
MGM250
90
80
0
20
40
60
gain reduction (dB)
VDS = 5 V; VG2nom = 4 V; IDnom = Iself bias; fw = 50 MHz;
funw = 60 MHz; Tamb = 25 °C.
Fig.11 Unwanted voltage for 1% cross-modulation
as a function of gain reduction;
typical values (see Fig.18).
1997 Dec 02
6