BF1105 View Datasheet(PDF) - Philips Electronics
Part Name
Description
View to exact match
BF1105 Datasheet PDF : 16 Pages
| |||
Philips Semiconductors
N-channel dual-gate MOS-FETs
Product specification
BF1105; BF1105R; BF1105WR
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VDS
drain-source voltage
ID
drain current
IG1
gate 1 current
IG2
gate 2 current
Ptot
total power dissipation
Tstg
storage temperature
Tj
operating junction temperature
CONDITIONS
Tamb ≤ 80 °C; note 1; see Fig.4
Note
1. Device mounted on a printed-circuit board.
MIN.
−
−
−
−
−
−65
−
MAX.
7
30
±10
±10
200
+150
+150
UNIT
V
mA
mA
mA
mW
°C
°C
handboo2k,5h0alfpage
Ptot
(mW)
200
150
100
50
0
0
40
MGM243
80
120
160
Tamb (°C)
Fig.4 Power derating curve.
1997 Dec 02
3
|
|
Share Link: 