Philips Semiconductors
N-channel dual-gate MOS-FETs
Product specification
BF1101; BF1101R; BF1101WR
handbook, full pagewidth
VAGC
R1
10 kΩ
C1
4.7 nF
RGEN
50 Ω
VI
C2
R2
50 Ω
4.7 nF
RG1
VGG
C3
4.7 nF
DUT
L1
≈ 2.2 µH
C4
RL
50 Ω
4.7 nF
VDS
MGS315
Fig.21 Cross-modulation test set-up.
Table 1 Scattering parameters: VDS = 5 V; VG2-S = 4 V; ID = 12 mA; Tamb = 25 °C
f
(MHz)
S11
MAGNITUDE
(ratio)
ANGLE
(deg)
S21
MAGNITUDE
(ratio)
ANGLE
(deg)
S12
MAGNITUDE
(ratio)
ANGLE
(deg)
50
100
200
300
400
500
600
700
800
900
1 000
0.987
0.985
0.976
0.963
0.949
0.933
0.916
0.897
0.877
0.856
0.832
−4.1
−8.1
−16.1
−23.9
−31.6
−38.8
−45.7
−52.2
−58.4
−64.5
−70.3
2.922
2.908
2.875
2.820
2.762
2.665
2.591
2.498
2.410
2.318
2.214
175.0
170.3
160.8
157.6
142.6
134.1
125.7
117.7
109.6
101.6
94.2
0.001
0.001
0.003
0.004
0.005
0.005
0.005
0.006
0.005
0.006
0.006
87.6
86.1
83.3
80.4
78.2
77.8
78.9
81.8
89.1
97.1
110.4
S22
MAGNITUDE
(ratio)
0.990
0.989
0.985
0.982
0.977
0.972
0.967
0.961
0.957
0.950
0.946
ANGLE
(deg)
−2.2
−4.3
−8.5
−12.6
−16.8
−20.8
−24.7
−28.5
−32.2
−35.8
−39.6
Table 2 Noise data: VDS = 5 V; VG2-S = 4 V; ID = 12 mA; Tamb = 25 °C
f
(MHz)
Fmin
(dB)
Γopt
(ratio)
800
1.5
0.715
(deg)
58.3
Rn
(Ω)
37.85
1999 May 14
9