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BF1101 View Datasheet(PDF) - Philips Electronics

Part Name
Description
View to exact match
BF1101
Philips
Philips Electronics Philips
BF1101 Datasheet PDF : 16 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Philips Semiconductors
N-channel dual-gate MOS-FETs
Product specification
BF1101; BF1101R; BF1101WR
STATIC CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
V(BR)DSS drain-source breakdown voltage
V(BR)G1-SS gate 1-source breakdown voltage
V(BR)G2-SS gate 2-source breakdown voltage
V(F)S-G1 forward source-gate 1 voltage
V(F)S-G2 forward source-gate 2 voltage
VG1-S (th) gate 1-source threshold voltage
VG2-S (th) gate 2-source threshold voltage
IDSX
drain-source current
IG1-SS
IG2-SS
gate 1 cut-off current
gate 2 cut-off current
Note
1. RG1 connects G1 to VGG = 5 V; see Fig.21.
CONDITIONS
VG1-S = VG2-S = 0; ID = 10 µA
VG2-S = VDS = 0; IG1-S = 10 mA
VG1-S = VDS = 0; IG2-S = 10 mA
VG2-S = VDS = 0; IS-G1 = 10 mA
VG1-S = VDS = 0; IS-G2 = 10 mA
VG2-S = 4 V; VDS = 5 V; ID = 100 µA
VG1-S = 5 V; VDS = 5 V; ID = 100 µA
VG2-S = 4 V; VDS = 5 V; RG1 = 120 k;
note 1
VG2-S = VDS = 0; VG1-S = 5 V
VG1-S = VDS = 0; VG2-S = 4 V
MIN.
7
7
7
0.5
0.5
0.3
0.3
8
MAX. UNIT
V
16
V
16
V
1.5 V
1.5 V
1.0 V
1.2 V
16
mA
50
nA
20
nA
DYNAMIC CHARACTERISTICS
Common source; Tamb = 25 °C; VG2-S = 4 V; VDS = 5 V; ID = 12 mA; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
yfs
Cig1-ss
Cig2-ss
Coss
Crss
F
Xmod
forward transfer admittance pulsed; Tj = 25 °C
input capacitance at gate 1 f = 1 MHz
input capacitance at gate 2 f = 1 MHz
output capacitance
f = 1 MHz
reverse transfer capacitance f = 1 MHz
noise figure
cross-modulation
f = 800 MHz; YS = YS opt
input level for k = 1% at 0 dB AGC;
fw = 50 MHz; funw = 60 MHz; note 1
input level for k = 1% at 40 dB AGC;
fw = 50 MHz; funw = 60 MHz; note 1
MIN.
25
85
TYP.
30
2.2
1.6
1.2
25
1.7
MAX.
40
2.7
35
2.5
UNIT
mS
pF
pF
pF
fF
dB
dBµV
100
dBµV
Note
1. Measured in test circuit of Fig.21.
1999 May 14
4
 

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