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BD136-10 View Datasheet(PDF) - STMicroelectronics

Part NameDescriptionManufacturer
BD136-10 Complementary low voltage transistor ST-Microelectronics
STMicroelectronics ST-Microelectronics
BD136-10 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
Electrical characteristics
2
Electrical characteristics
BD135 - BD136 - BD139 - BD140
(Tcase= 25 °C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Polarity
Test conditions
Value
Unit
Min. Typ. Max.
ICBO
IEBO
Collector cut-off
current (IE=0)
NPN
PNP
Emitter cut-off current NPN
(IC=0)
PNP
Collector-emitter
VCEO(sus)(1) sustaining voltage
(IB=0)
NPN
PNP
VCE(sat) (1)
Collector-emitter
saturation voltage
VBE (1) Base-emitter voltage
NPN
PNP
NPN
PNP
hFE (1) DC current gain
NPN
PNP
hFE (1)
hFE groups
NPN
PNP
VCB = 30 V
VCB = 30 V, TC = 125 °C
VCB = -30 V
VCB = -30 V, TC = 125 °C
VEB = 5 V
VEB = -5 V
IC = 30 mA
BD135
45
BD139
80
IC = -30 mA
BD136
-45
BD140
-80
IC = 0.5 A, IB = 0.05 A
IC = -0.5 A, IB = -0.05 A
IC = 0.5 A, VCE = 2 V
IC = -0.5 A, VCE = -2 V
IC = 5 mA, VCE = 2 V
25
IC = 150 mA, VCE = 2 V 40
IC = 0.5 A, VCE = 2 V
25
IC = -5 mA, VCE = -2 V 25
IC = -150 mA, VCE = -2 V 40
IC = -0.5 A, VCE = -2 V 25
IC = 150 mA, VCE = 2 V
BD139-10
63
BD135-16/BD139-16
100
IC = -150 mA, VCE = -2 V
BD140-10
63
BD136-16/BD140-16
100
0.1 µA
10 µA
-0.1 µA
-10 µA
10 µA
-10 µA
V
V
V
V
0.5 V
-0.5 V
1V
-1 V
250
250
160
250
160
250
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
4/9
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