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9N60 View Datasheet(PDF) - Inchange Semiconductor

Part Name
Description
View to exact match
9N60
Iscsemi
Inchange Semiconductor Iscsemi
9N60 Datasheet PDF : 2 Pages
1 2
INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
9N60
·FEATURES
·Drain Current ID= 8.5A@ TC=25
·Drain Source Voltage-
: VDSS= 600V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 1.0Ω(Max)
·Avalanche Energy Specified
·Fast Switching
·Simple Drive Requirements
·DESCRITION
·Designed for high efficiency switch mode power supply.
·ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
VGS
Drain-Source Voltage
Gate-Source Voltage-Continuous
600
V
±20
V
ID
Drain Current-Continuous
8.5
A
IDM
Drain Current-Single Plused
34
A
PD
Total Dissipation @TC=25
125
W
Tj
Max. Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
1.0 /W
62.5 /W
isc Websitewww.iscsemi.cn
 

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