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ES1A View Datasheet(PDF) - LiteOn Technology

Part Name
Description
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ES1A Datasheet PDF : 2 Pages
1 2
LITE-ON
SEMICONDUCTOR
SURFACE MOUNT
SUPER FAST RECTIFIERS
ES1A thru ES1J
REVERSE VOLTAGE - 50 to 600 Volts
FORWARD CURRENT - 1.0 Ampere
FEATURES
Glass passivated chip
Super fast switching for high efficiency
For surface mounted applications
Low forward voltage drop and high current capability
Low reverse leakage current
Plastic material has UL flammability classification 94V-0
MECHANICAL DATA
Case : Molded plastic
Polarity : Indicated by cathode band
Weight : 0.002 ounces, 0.064 grams
SMA
SMA
A
DIM. MIN. MAX.
A
4.06 4.57
B
C
B
2.29 2.92
C
1.27 1.63
D
0.15 0.31
E
4.83 5.59
G
H
F
D
E
F
0.05 0.20
G
2.01 2.40
H
0.76 1.52
All Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
SYMBOL ES1A
ES1B
ES1C
ES1D
Maximum Recurrent Peak Reverse Voltage
VRRM
50
100
150
200
Maximum RMS Voltage
VRMS
35
70
105
140
Maximum DC Blocking Voltage
VDC
50
Maximum Average Forward
Rectified Current
@TL =110 C
I(AV)
Peak Forward Surge Current
8.3ms single half sine-wave
IFSM
super imposed on rated load (JEDEC METHOD)
100
150
200
1.0
30
Maximum forward Voltage at 1.0A DC
VF
0.92
Maximum DC Reverse Current @TJ =25 C
at Rated DC Blocking Voltage @TJ=125 C
IR
5.0
200
Maximum Reverse Recovery Time (Note 1)
TRR
25
Typical Reverse Recovery Time
TRR
20
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating Temperature Range
CJ
R0JA
R0JL
R0JC
TJ
10
90
30
25
-55 to + 150
Storage Temperature Range
TSTG
NOTES : 1.Reverse Recovery Test Conditions :IF=0.5A,IR=1.0A,IRR=0.25A.
2.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3.Thermal Resistance junction to Ambient, Lead and Case.
-55 to + 150
ES1G
400
280
400
ES1J
600
420
600
UNIT
V
V
V
A
A
1.25
1.30
V
uA
35
ns
30
ns
pF
C/W
C
C
REV. 6, Aug-2009, KSGA01
 

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