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2SK3320 View Datasheet(PDF) - Toshiba

Part Name
Description
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2SK3320 Datasheet PDF : 0 Pages
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK3320
For Low Noise Audio Amplifier Applications
· Two devices in a ultra super mini (five pins) package
· High |Yfs|: |Yfs| = 15 mS (typ.) (VDS = 10 V, VGS = 0)
· High breakdown voltage: VGDS = 50 V
· Super low noise: NF = 1.0dB (typ.)
(VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 k)
· High input impedance: IGSS = 1 nA (max) (VGS = 30 V)
2SK3320
Unit: mm
Maximum Ratings (Ta = 25°C) (Q1, Q2 common)
Characteristics
Gate-drain voltage
Gate current
Drain power dissipation
Junction temperature
Storage temperature range
Note 1: Total rating
Symbol
Rating
Unit
VGDS
IG
-50
V
10
mA
PD
200
mW
(Note 1)
Tj
125
°C
Tstg
-55~125
°C
JEDEC
JEITA
TOSHIBA
2-2L1B
Weight: 6.2 mg (typ.)
Marking
Pin Assignment (top view)
1
2003-03-27
 

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