TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK3320
For Low Noise Audio Amplifier Applications
· Two devices in a ultra super mini (five pins) package
· High |Yfs|: |Yfs| = 15 mS (typ.) (VDS = 10 V, VGS = 0)
· High breakdown voltage: VGDS = −50 V
· Super low noise: NF = 1.0dB (typ.)
(VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 kΩ)
· High input impedance: IGSS = −1 nA (max) (VGS = −30 V)
2SK3320
Unit: mm
Maximum Ratings (Ta = 25°C) (Q1, Q2 common)
Characteristics
Gate-drain voltage
Gate current
Drain power dissipation
Junction temperature
Storage temperature range
Note 1: Total rating
Symbol
Rating
Unit
VGDS
IG
-50
V
10
mA
PD
200
mW
(Note 1)
Tj
125
°C
Tstg
-55~125
°C
JEDEC
―
JEITA
―
TOSHIBA
2-2L1B
Weight: 6.2 mg (typ.)
Marking
Pin Assignment (top view)
1
2003-03-27