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2SK1296 View Datasheet(PDF) - Hitachi -> Renesas Electronics

Part Name
Description
View to exact match
2SK1296
Hitachi
Hitachi -> Renesas Electronics Hitachi
2SK1296 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
2SK1296
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• 4 V gate drive device
– Can be driven from 5 V source
• Suitable for motor drive, DC-DC converter,
power switch and solenoid drive
TO–220AB
2
1
3
123
1. Gate
2. Drain
(Flange)
3. Source
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
———————————————————————————————————————————
Drain to source voltage
VDSS
60
V
———————————————————————————————————————————
Gate to source voltage
VGSS
±20
V
———————————————————————————————————————————
Drain current
ID
30
A
———————————————————————————————————————————
Drain peak current
ID(pulse)*
120
A
———————————————————————————————————————————
Body to drain diode reverse drain current IDR
30
A
———————————————————————————————————————————
Channel dissipation
Pch**
75
W
———————————————————————————————————————————
Channel temperature
Tch
150
°C
———————————————————————————————————————————
Storage temperature
Tstg
–55 to +150
°C
———————————————————————————————————————————
* PW 10 µs, duty cycle 1 %
** Value at TC = 25 °C
 

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