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K1058 View Datasheet(PDF) - Hitachi -> Renesas Electronics

Part NameK1058 Hitachi
Hitachi -> Renesas Electronics Hitachi
DescriptionSilicon N-Channel MOS FET
K1058 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
2SK1056, 2SK1057, 2SK1058
Outline
TO-3P
D
G
1
2
3
1. Gate
2. Source
(Flange)
S
3. Drain
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
2SK1056
2SK1057
2SK1058
Gate to source voltage
Drain current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Note: 1. Value at TC = 25°C
Symbol
VDSX
VGSS
ID
I DR
Pch*1
Tch
Tstg
Ratings
Unit
120
V
140
160
±15
V
7
A
7
A
100
W
150
°C
–55 to +150
°C
2
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2SK1056, 2SK1057, 2SK1058

Application
Low frequency power amplifier
Complementary pair with 2SJ160, 2SJ161 and 2SJ162


Features
•  Good frequency characteristic
•  High speed switching
•  Wide area of safe operation
•  Enhancement-mode
•  Good complementary characteristics
•  Equipped with gate protection diodes
•  Suitable for audio power amplifier

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